Advanced, multi-chamber platforms for thin layers growth technology, designed for maximum compatibility with other surface science techniques, auxiliary lab equipment, and any accessories.
Versatile, modular design allows for easy platform expansion & integration with any other deposition, analytical or preparation HV/UHV units, e.g. by radial distribution or tunnel transferring systems.
It is intended for thin-film deposition of single crystals, and features in-situ characterisation of magnetic properties, topography, crystallography, film thickness, etc.
The process chamber can contain 10 ports for evaporation sources and the substrate stage is intended for up to 8-inch diameter samples, with a heating & rotation option. The deposition process can be controlled over a wide temperature range (from LN2 up to 1400˚C) and can be fully software programmed and controlled via a PLC controller.
The process chamber is equipped with connecting flanges in UHV standard for connecting current and future equipment, including:
The final design and functionality depend on the system configuration.
The system’s modular design allows combining and integrating with any other research platform via radial distribution transferring solution or transferring tunnel.
A pumping system combined with the standard volume of the process chamber allows for reaching the base pressure in the range of 5×10-10 – 5×10-11 mbar, depending on the pump’s configuration. A pumping system is a combination of different types of pumps, e.g. forevacuum pumps, ion pumps, cryo-pumps, turbo pumps, or titanium sublimation pumps, individually selected to achieve the best pumping performance according to specific application demands.
Synthesium process control software allows integration and perfect cooperation of sources of various types and manufacturers and enables easy recipe writing, automated growth control and extensive data recording. Allows integrating new additional components based on Tango open source device.
The system is equipped with advanced, easy-to-use power supplies and electronic devices controlling and supporting the sources and the whole included research equipment.
| Applications | Sources | |||
| Effusion cell | E-beam evaporators | Valved Cracker Source | Sublimation Source | |
| Metals | Al, Co, Ni, Cu (etc.) | Mo, Pd, Ta, W, Pt | ||
| group III/V | Be, Al, Ga, In | P, As, Sb | C, Si doping | |
| group II/VI | Be, Zn, Cd | S, Se, Te | ||
| group IV | Ge, Sn, Pb | Si, Ge | B, P, Sb doping | |
| Oxides | Mn, Fe, Ni, Ga, Bi, Eu | |||
| Topological Insulators (TI) | Ge, Sn, Te, Bi, GeSb | B | Se, Te | |