Description
A key feature of the EBV40A is the integrated flux monitor. Evaporant flux is indirectly monitored via the measured ion current, providing accurate flux adjustment and faster deposition rate control. The ion collector is contained within the beam exit column. At a given electron emission current and beam energy, the measured ion flux measured is directly proportional to the flux of evaporated atoms. The EBV40A-PS is equipped with built-in PID controller which stabilizes evaporant flux at the desired level. The unit can be operated in AUTO mode (with ion flux control) or MANUAL mode (without ion flux control). The EBV40A-PS can be supplied as a full width 19″ rack mounting unit (3U height) or free standing. The unit can be remotely controlled via one of the available interfaces.
Technical data
Supply voltage |
110 V or 230 V, 50/60 Hz (specify at order)
(power consumption max 600 W) |
Anode voltage range (Ueng) |
0 – 1500 eV at max 200 mA; resolution < 1 V; ripple < 0.5PP |
Cathode current range (Ifil) |
0 – 2.3 A, resolution < 0,1 A, ripple < 0.05 A |
Ion current range (Flux) |
1.00 nA – 99.9 mA |
Max emission currrent |
200 mA |
Temperature monitor |
0 – 75 °C, temperature of water-cooled copper cylinder |
Flux current regulator |
flux current controlled with internal regulator |
Operating modes |
auto/manual |
Timer |
dual mode timer 0 s – 99 h 59 min |
Communication interface* (option) |
RS232/485/422, USB |
User interface |
large LCD graphics display, functions keys & digital encoder |
Interface languages |
English, Polish |
Dimensions |
483 x 133 x 380 mm (W x H x D), 19″ rack mountable or stand alone |
Weight (approx.) |
9 kg |
* Only one comms interface can be used at any one time and is chosen at time of order. However, this may be swapped/interchanged with any other comms interface at any future date via simple rear panel plug and play swap, without having to access the internals of the unit.
Application
The EBV40A-PS power supply drives the EBV40A Electron Beam Evaporator for ultra-pure sub-monolayer and multilayer growth in MBE applications.