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iMBE systems

Fully automated MBE hardware setup for thin film growth intended e.g. for semi-production & user-convenient deposition of very high-quality atomic layers.

The iMBE system is intended for thin-film deposition of single crystals and features in-situ characterization of magnetic properties, topography, crystallography, film thickness, etc.

SKU: 329-2-1 Category:

Features

  • Fully automated and software-controlled MBE platform
  • Suited for growth of elements from groups III/V, II/VI as well as other heterostructures
  • Up to 10 evaporation sources in DN 63CF ports, with power supplies
  • Valved cracker sources with a power supply
  • High-power e-guns with a power supply
  • 1-4 axes motorized or manual manipulator with receiving station able to achieve high temperatures up to 1400°C (with stable, long-life heater element made of Solid SiC)
  • Range of substrate holders size: from 10×10 mm up to 4 inches
  • Base pressure from 5×10-10 to 5×10-11 mbar
  • Process chamber 450 mm, with an exchangeable bottom flange for up to 10 ports DN 63CF for evaporation sources
  • Process chamber with door access and differential pumping system,
  • Pumping system (based on the backing pump, TMP, ion pump & TSP)
  • Quartz balance for deposition rate measurement and thickness monitor, with Z manipulator to measure rate in focus point
  • RHEED/TorrRHEED with equipment
  • Additional independent shutters on 63CF ports
  • Load Lock chamber for sample holders loading
  • Reliable and fast linear transferring system from load-lock to the process chamber
  • LN2 cooling shroud
  • Internal shield 
  • Vacuum gauges with equipment
  • Viewports – observation windows with shutter
  • Cooling system with integrated blow-off line before bakeout
  • Bakeout system 
  • The adjustable rigid main frame of the system 
  • 19“ cabinets with electronic units
  • Full control deposition process & equipment by PLC unit and Synthesium software

Description

The process chamber contains 10 ports for evaporation sources and the substrate stage is intended for up to 4-inch diameter samples, with a heating & rotation option. It can be easily accessed through the load-lock chamber with the linear transferring system or directly by a differentially pumped door. The deposition process can be controlled over a wide temperature range (from LN2 up to 1400˚C) and can be fully software programmed and controlled via a PLC controller.

The process chamber is equipped with connecting flanges in UHV standard for connecting current and future equipment, including: 

  • up to 10 sources with flange DN 63CF (high or low-temperature, single or multi-filament),
  • independent shutters with flange DN 63CF,
  • valved cracker sources with a power supply,
  • high-power e-guns with a power supply,
  • substrate manipulator with a temperature range (from LN2 up to 1400˚C),
  • pumping system (based on the backup pump, TMP, ion pump & TSP pump),
  • vacuum gauges with equipment,
  • entry port for linear transferring systems e.g. from load lock, radial distribution chamber, transferring tunnel, or transport box,
  • quartz balance with Z manipulator,
  • RHEED/TorrRHEED with equipment,
  • motorised or manual shutter (following the substrate) for vicinal layers or masks,
  • additional gas dosing system eg. for the reactive deposition process,
  • viewports – observation windows with shutters,
  • residual gas analyser,
  • beam flux monitor,
  • heated viewports for diagnostic devices.

The bottom flange can be easily removed/replaced using a specially designed trolley, thus a wide range of different sources configurations and options are available for your growth process. One versatile trolley can be used to replace both the bottom flange, cryo-panel, and liner (for easy cleaning). Thanks to the possibility of replacing the bottom flange with sources, one deposition chamber can be adapted to different applications.

The final design and functionality depend on the system configuration.

If needed, the system’s modular design allows combining and integrating with any other research platform via radial distribution transferring solution or transferring tunnel.  

A pumping system combined with the standard volume of the process chamber allows for reaching the base pressure in the range of  5×10-10 – 5×10-11 mbar, depending on the pump’s configuration. A pumping system is a combination of different types of pumps, e.g. forevacuum pumps, ion pumps, cryo-pumps, turbo pumps, or titanium sublimation pumps, individually selected to achieve the best pumping performance according to specific application demands. 

Synthesium process control software allows integration and perfect cooperation of sources of various types and manufacturers and enables easy recipe writing, automated growth control and extensive data recording. Allows integrating new additional components based on Tango open source device.

The system is equipped with advanced, easy-to-use power supplies and electronic devices controlling and supporting the sources and the whole included research equipment.

Options

  • Additional storage chamber 
  • Motorised or manual shutter (following the substrate) for vicinal layers or masks
  • Protection shield against cross-contamination 
  • Vacuum suitcase (transport box) with a port in the load-lock chamber
  • Additional gas dosing system eg. for the reactive deposition process
  • Residual gas analyser
  • Beam flux monitor 
  • Heated viewports for the diagnostic devices
  • Pyrometer

Applications

Applications Sources
Effusion cell E-beam evaporators Valved Cracker Source Sublimation Source
Metals Al, Co, Ni, Cu (etc.) Mo, Pd, Ta, W, Pt
group III/V Be, Al, Ga, In P, As, Sb C, Si doping
group II/VI Be, Zn, Cd S, Se, Te
group IV Ge, Sn, Pb Si, Ge B, P, Sb doping
Oxides Mn, Fe, Ni, Ga, Bi, Eu
Topological Insulators (TI) Ge, Sn, Te, Bi, GeSb B Se, Te

 

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