Description
The process chamber contains 8 ports for evaporation sources and the substrate stage is intended for 10×10 mm samples, with a heating & rotation option.
The deposition process can be controlled over a wide temperature range (from LN2 up to 1400˚C) and can be fully software programmed and controlled via a PLC controller.
The process chamber is equipped with connecting flanges in UHV standard for connecting current and future equipment, including:
- up to 8 effusion cells with flange DN40CF (high or low-temperature, single or multi-filament),
- substrate manipulator with a temperature range (from LN2 up to 1400˚C),
- pumping system (based on the backing pump, TMP, ion pump & TSP),
- vacuum gauges with equipment,
- entry port for linear transferring systems or transport box,
- quartz balance, thickness monitor with Z manipulator,
- RHEED/TorrRHEED with equipment,
- motorised or manual shutter (following the substrate) for vicinal layers or masks,
- additional gas dosing eg. for the reactive deposition process,
- viewports – observation windows with shutters,
- residual gas analyser,
- heated viewports for diagnostic devices.
The final design and functionality depend on the system configuration.
A pumping system combined with the small volume of the process chamber allows for reaching the base pressure in a short time, where the base pressure is guaranteed below 5×10-10 mbar.
The system is equipped with advanced, easy-to-use power supplies and electronic devices controlling and supporting the sources and the whole included research equipment.
