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Standard MBE systems

The PREVAC stand-alone MBE systems comprise a deposition process chamber together with a load-lock chamber for easy and fast substrate loading. It is suited for the growth of elements from groups III/V, II/VI as well as other heterostructures, and more.

A system design where the bottom flange is exchangeable is available. The whole flange can be easily replaceable using a specially designed trolley, thus a wide range of different sources configurations and options are possible for your research.

SKU: 329 Category:

Features

  • A versatile solution for most research needs in the field of MBE growth processes
  • Suited for growth of elements from groups III/V, II/VI as well as other heterostructures
  • Up to 10 evaporation sources in DN 63CF ports, with power supplies
  • Valved cracker sources with a power supply
  • High-power e-guns with a power supply
  • 1-4 axes motorized or manual manipulator with receiving station able to achieve high temperatures up to 1400°C (with stable, long-life heater element made of Solid SiC)
  • Range of substrate holders size: from 10×10 mm up to 4 inches
  • Base pressure from 5×10-10 to 5×10-11 mbar
  • Process chamber Ø 300 or 450 mm, with an exchangeable bottom flange (eg. up to 10 ports DN 63CF for evaporation sources in the chamber Ø 450 mm)
  • Pumping system (based on the backing pump, TMP, ion pump & TSP)
  • Quartz balance for deposition rate measurement and thickness monitor, with Z manipulator to measure rate in focus point
  • RHEED/TorrRHEED with equipment
  • Additional independent shutters on 63CF ports
  • Load Lock chamber for sample holders loading
  • Reliable and fast linear transferring system from load-lock to the process chamber
  • Internal shield 
  • Vacuum gauges with equipment
  • Viewports – observation windows with shutter
  • Cooling system with integrated blow-off line before bakeout
  • Bakeout system 
  • The adjustable rigid main frame of the system 
  • 19“ cabinets with electronic units

Description

The process chamber can contain 10 ports for evaporation sources and the substrate stage is intended for up to 4-inch diameter samples, with a heating & rotation option. The deposition process can be controlled over a wide temperature range (from LN2 up to 1400˚C) and can be fully software programmed and controlled via a PLC controller.  

The process chamber is equipped with connecting flanges in UHV standard for connecting current and future equipment, including: 

  • up to 10 sources with flange DN 63CF (high or low-temperature, single or multi-filament),
  • independent shutters with flange DN 63CF,
  • valved cracker sources with a power supply,
  • high-power e-guns with a power supply,
  • substrate manipulator with a temperature range (from LN2 up to 1400˚C),
  • pumping system (based on the backup pump, TMP, ion pump & TSP pump),
  • vacuum gauges with equipment,
  • entry port for linear transferring systems e.g. from load lock, radial distribution chamber, transferring tunnel, or transport box,
  • quartz balance with Z manipulator,
  • RHEED/TorrRHEED with equipment,
  • motorised or manual shutter (following the substrate) for vicinal layers or masks,
  • additional gas dosing system eg. for the reactive deposition process,
  • viewports – observation windows with shutters,
  • residual gas analyser,
  • beam flux monitor,
  • heated viewports for diagnostic devices.

The final design and functionality depend on the system configuration.

If needed, the system’s modular design allows combining and integrating with any other research platform via radial distribution transferring solution or transferring tunnel.  

A pumping system combined with the standard volume of the process chamber allows for reaching the base pressure in the range of  5×10-10 – 5×10-11 mbar, depending on the pump’s configuration. A pumping system is a combination of different types of pumps, e.g. forevacuum pumps, ion pumps, cryo-pumps, turbo pumps, or titanium sublimation pumps, individually selected to achieve the best pumping performance according to specific application demands. 

Synthesium process control software allows integration and perfect cooperation of sources of various types and manufacturers and enables easy recipe writing, automated growth control and extensive data recording. Allows integrating new additional components based on Tango open source device.

The system is equipped with advanced, easy-to-use power supplies and electronic devices controlling and supporting the sources and the whole included research equipment.

Options

  • Additional storage chamber 
  • Motorised or manual shutter (following the substrate) for vicinal layers or masks
  • Protection shield against cross-contamination 
  • Vacuum suitcase (transport box) with a port in the load-lock chamber
  • Additional gas dosing system eg. for the reactive deposition process
  • Residual gas analyser
  • Beam flux monitor 
  • Heated viewports for the diagnostic devices
  • Pyrometer 
  • Full control deposition process & equipment by PLC unit and Synthesium software

Applications

Applications Sources
Effusion cell E-beam evaporators Valved Cracker Source Sublimation Source
Metals Al, Co, Ni, Cu (etc.) Mo, Pd, Ta, W, Pt
group III/V Be, Al, Ga, In P, As, Sb C, Si doping
group II/VI Be, Zn, Cd S, Se, Te
group IV Ge, Sn, Pb Si, Ge B, P, Sb doping
Oxides Mn, Fe, Ni, Ga, Bi, Eu
Topological Insulators (TI) Ge, Sn, Te, Bi, GeSb B Se, Te

 

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